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YTTRIUM-DOPPED BISMUTH TITANATE THIN FILM AND PREPARATION THEREOF
YTTRIUM-DOPPED BISMUTH TITANATE THIN FILM AND PREPARATION THEREOF
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机译：掺钛酸铋薄膜及其制备方法
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摘要
A bismuth yttrium titanate (BYT) film having the composition of formula (I) has enhanced residual polarization and electric fatigue properties with excellent ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device including a FRAM device: ?in-line-formulae description="In-line Formulae" end="lead"?BiSUB4-x/SUBYSUBx/SUBTiSUB3/SUBOSUB12/SUB (I)?in-line-formulae description="In-line Formulae" end="tail"? wherein x is an integer of 0.1 to 2.
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机译：具有式（I）组成的钛酸铋钇（BYT）膜具有增强的残留极化和电疲劳性能，并且铁电性能优异，因此可以有利地用于包括FRAM器件的电气或电子器件中。 in-line-formulae description =“在线公式” end =“ lead”？> Bi 4-x Y x Ti 3 O 12 （I）<？in-line-formulae description =“在线表达式” end =“ tail”？>其中x是0.1到2的整数。
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