MEMS压力传感器工艺可靠性测试评价

摘要

随着MEMS技术的飞速发展,可靠性问题逐渐成为MEMS器件在军事和商业中应用的重要阻碍.结合器件的工作环境,分别从高温、高温高湿、温度冲击、过电压、压力过载、温湿循环等环境负载方面探讨硅压阻式MEMS压力传感器的工艺可靠性问题.试验结果表明,环境负载后,圆片级器件特性参数基本无变化,而封装级器件特性参数有不同程度的漂移.参照工厂制定的工艺标准(<10%),封装级器件测试数据可以有效监控MEM产品的工艺质量.%Along with the rapid development of MEMS technology , reliability issue gradually becomes the major barrier for applying MEMS sensor in military and commercial fields. Based on the sensor operation environment, environmental loads including high temperature bias, high temperature-humidity bias, temperature shock, over voltage bias,pressure cooker test,temperature-humidity cycling test are put forward to discuss silicon piezoresistive MEMS pressure sensor process reliability. The test results indicate that, after environmental loads, wafer level devices characteristic parameter has no shift,while package level devices characteristic parameter shifts in different degrees. Based on the process spec in factory (<10%) , the package level devices test data could be used to availably monitor MEMS product process quality.