A method which utilizes a high spatial resolution technique to enhance the accuracy of IR thermal transient apparatus is hereby proposed to improve the accuracy of IR thermal transient apparatus for GaN HEMT junction temperature measurement. The law of how the junction temperature changes as a function of the pulse signal is analyzed, which proves the linear relationship between transient temperatures and time-averaged temperatures on every location; in line with such relationship, time-averaged temperatures on every location (high spatial resolution) is used for correcting the IR transient temperature results, the accuracy of IR thermal transient apparatus is improved effectively. Finite element simulation is performed to have the correctness of such the method verified. With such method, an IR Microscope with a high spatial resolution is used for correcting the results of IR transient thermal apparatus and the transient temperatures with a 2.8μm spatial resolution is obtained. This method is conducive to improving the accuracy of IR transient thermal apparatus effectively.%用高空间分辨率测温技术与瞬态红外设备测温结果结合的方法提高瞬态红外设备对GaN HEMT结温检测的准确度.对GaN HEMT随脉冲工作条件的结温变化规律进行分析,证明脉冲条件下器件各个位置的瞬时温度与平均温度呈线性关系;依据上述关系,采用各个位置的平均温度(高空间分辨率)对瞬态红外设备检测结果进行修正,有效提高瞬态红外设备检测GaN HEMT时的准确度.用有限元仿真结果验证上述方法的准确性.根据该方法,用高空间分辨率的显微红外测温结果对瞬态红外设备测温结果进行修正,实现2.8μm空间分辨率的瞬态温度检测.该方法可以有效提高瞬态红外设备检测GaN HEMT结温结果的准确度.
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