硅基二维平板光子晶体高Q微腔的制作和光谱测量

摘要

We fabricate a high Q photonic crystal cavity on the top of SOI（sihcon on insulator） with EBL（electron beam lithography） and ICP（inductively coupled plasma）.The value of Q can reach 7×10~4.It provides basic condition for the following experiments,for example for the study of interaction between light and substance.The high Q cavity also provides good circumstance for the quantum information.The theoretical result of the value of Q is 1.2×10~5 from FDTD（finite difference time domain） simulation.%利用微加工技术,在SOI上制作出了高Q值的光子晶体微腔,Q值可以达7×10~4以上,为后续的光与物质相互作用和量子信息方面的实验奠定了基础.实验结果与理论模拟符合得较好.通过三维时域有限差分法模拟,得到光子晶体微腔的Q值为1.2×10~5左右.