Dissipation and decoherence in open nonequilibrium electronic systems.

摘要

We theoretically study steady-state nonequilibrium properties of various open electronic systems subject to time-independent external bias. A charge current is established across each system by its coupling to two external particle reservoirs maintained at different chemical potentials. We discuss the impact of intra-reservoir electron correlations on transport, and examine how reservoir-generated dissipation and nonequilibrium-induced decoherence influence these systems.;The Keldysh path integral formalism is used to theoretically formulate models that describe the remaining open nonequilibrium systems. We consider voltage-induced electron-phonon scattering and electron mass enhancement due to phonons in a model metallic system. The possibility of adjusting the acoustic phonon velocity and the Thomas-Fermi screening length with external voltage is discussed. The effects of dissipation is investigated in an open BCS superconducting graphene, where the dissipation-induced rearrangement of its ground state from the BCS superconductor to the Fermi liquid is examined. The results theoretically infer prospects for a voltage-tuned metal-to-BCS quantum phase transition in graphene. Lastly, we develop a theory of nonequilibrium quantum criticality in open itinerant Ising and Heisenberg magnets. Both departures from equilibrium at conventional quantum critical points and the physics of phase transitions induced by the nonequilibrium drive are analyzed.;The effect of intra-lead electron interactions on transport is investigated in the context of a phonon-coupled single molecule transistor driven by Luttinger-liquid source and drain leads. The semi-classical master equation approach is used to compute current and noise characteristics of the device for various interaction strengths in the leads. The results suggest the possibility of tuning the Fano factor of the device using intra-lead electron interactions.