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Studies of extreme ultraviolet emission from laser produced plasmas, as sources for next generation lithography.

机译:研究激光产生的等离子体产生的极紫外线,作为下一代光刻的来源。

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摘要

The work presented in this thesis is primarily concerned with the optimisation of extreme ultraviolet (EUV) photoemission around 13.5 nm, from laser produced tin (Sn) plasmas. EUV lithography has been identified as the leading next generation technology to take over from the current optical lithography systems, due to its potential of printing smaller feature sizes on integrated circuits. Many of the problems hindering the implementation of EUV lithography for high volume manufacturing have been overcome during the past 20 years of development. However, the lack of source power is a major concern for realising EUV lithography and remains a major roadblock that must be overcome. Therefore in order to optimise and improve the EUV emission from Sn laser plasma sources, many parameters contributing to the make-up of an EUV source are investigated.;Chapter 3 presents the results of varying several different experimental parameters on the EUV emission from Sn laser plasmas. Several of the laser parameters including the energy, gas mixture, focusing lens position and angle of incidence are changed, while their effect on the EUV emission is studied. Double laser pulse experiments are also carried out by creating plasma targets for the main laser pulse to interact with. The resulting emission is compared to that of a single laser pulse on solid Sn.;Chapter 4 investigates tailoring the CO2 laser pulse duration to improve the efficiency of an EUV source set-up. In doing so a new technique for shortening the time duration of the pulse is described. The direct effects of shortening the CO2 laser pulse duration on the EUV emission from Sn are then studied and shown to improve the efficiency of the source.;In Chapter 5 a new plasma target type is studied and compared to the previous dual laser experiments. Laser produced colliding plasma jet targets form a new plasma layer, with densities that can be optimised for re-heating with the main CO2 laser pulse.;Chapter 6 will present some experiments carried out on laser produced gadolinium plasmas, with its photoemission around 6.7 nm seen as a potential beyond EUV source. Three different laser pulse durations and a range of laser intensities are utilised in experiments to try to optimise the in-band emission, while also observing the effect on ion emission from the plasma. Finally, the experiments presented in thesis and their results are summarised in Chapter 7, along with presenting possible future work.
机译:本文提出的工作主要涉及优化激光产生的锡(Sn)等离子体在13.5 nm附近的极紫外(EUV)光发射。由于具有在集成电路上印刷较小特征尺寸的潜力,EUV光刻技术已被公认为是取代当前光学光刻系统的下一代领先技术。在过去的20年发展过程中,已经克服了许多阻碍EUV光刻在大批量生产中实现的问题。但是,缺乏源功率是实现EUV光刻的主要问题,并且仍然是必须克服的主要障碍。因此,为了优化和改善Sn激光等离子体源的EUV发射,研究了许多构成EUV源的参数。;第三章介绍了改变Sn激光器EUV发射的几个不同实验参数的结果。等离子。改变了一些激光参数,包括能量,混合气体,聚焦透镜的位置和入射角,同时研究了它们对EUV发射的影响。通过创建等离子体目标以使主激光脉冲与之交互,还可以进行双激光脉冲实验。将产生的发射与固体Sn上单个激光脉冲的发射进行比较。第4章研究了调整CO2激光脉冲持续时间以提高EUV光源设置的效率。在此,描述了一种用于缩短脉冲的持续时间的新技术。然后研究了缩短CO2激光脉冲持续时间对Sn的EUV发射的直接影响,并表明可以提高源的效率。在第5章中,研究了一种新型等离子体靶,并将其与以前的双激光实验进行了比较。激光产生的碰撞等离子体射流靶形成一个新的等离子体层,其密度可以优化,以便通过主CO2激光脉冲进行再加热。;第6章将介绍在激光产生的g等离子体上进行的一些实验,其光发射约为6.7 nm被视为超越EUV来源的潜力。实验中使用了三种不同的激光脉冲持续时间和一定范围的激光强度,以尝试优化带内发射,同时还观察了对等离子体中离子发射的影响。最后,第七章总结了论文中提出的实验及其结果,并提出了可能的未来工作。

著录项

  • 作者

    Cummins, Thomas.;

  • 作者单位

    University College Dublin (Ireland).;

  • 授予单位 University College Dublin (Ireland).;
  • 学科 Physics Fluid and Plasma.;Physics Atomic.;Physics General.
  • 学位 Ph.D.
  • 年度 2014
  • 页码 209 p.
  • 总页数 209
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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