Electromigraton simulation of interconnetion in very large scale integration

摘要

As the rapid development of semiconductor industry, the interconnection in Very Large Scale Integration (VLSI) gets smaller and carries higher electric current density. It makes electromigration become a predominating reliability problem in VLSI. In this thesis, the overviews of electromigration is presented and a refined finite element model based on atom flux divergence methodology for electromigration is proposed, taking into account the thermalmigration and the stressmigration contribution. Two typical structure of interconnection in VLSI like solder joints and metallic strips are simulated by ANSYS and MATLAB. The void nucleation site of the solder joints in CSP package is predicted by static simulation and the void evolution in the AlCu strip is predicted by dynamic simulation. The results obtained by simulation agree well with the reported results.