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International Workshop on Stress-Induced Phenomena in Microelectronics

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1.Physics-Based Simulation of EM and SM in TSV-Based 3D IC Structures

机译：基于TSV基于3D IC结构的基于物理学和SM的仿真
- 作者：Armen Kteyan;Valeriy Sukharev;Ehrenfried Zschech
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- stress migration;
- electromigration;
- TSV;
- vacancy;
- FEA simulation.;
2.Modeling of Microstructural Effects on Electromigration Failure

机译：电迁移失效的微观结构效应建模
- 作者：H. Ceric;R. L. de Orio;W. Zisser;S. Selberherr
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- EM;
- interconnect;
- reliability;
- physical modeling;
- simulation;
3.3D imaging of semiconductor components by discrete laminography

机译：半导体元件的三维成像通过离散灯光图
- 作者：K.J. Batenburg;W.J. Palenstijn;J. Sijbers
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- Laminography;
- discrete tomography;
4.Thermomechanical Characterization and Modeling for TSV Structures

机译：TSV结构的热机械表征和建模
- 作者：Tengfei Jiang;Suk-Kyu Ryu;Qiu Zhao;Jay Im;Paul S. Ho;Rui Huang
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- through-silicon via;
- thermal stress;
- via extrusion;
- interfacial reliability.;
5.Microstructure, impurity and metal cap effects on Cu electromigration

机译：Cu电迁移的微观结构，杂质和金属帽效应
- 作者：C.-K. Hu;L.G. Gignac;J. Ohm;C.M. Breslin;E. Huang;G. Bonilla;E. Liniger;R. Rosenberg;S. Choi;A. H. Simon
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- Electromigration;
- microstructure;
- impurity;
- CoWP cap;
- Cu alloy;
6.Effects of Fluoride Residue on Thermal Stability in Cu/Porous Low-k Interconnects

机译：氟残余物对Cu /多孔低k互连中热稳定性的影响
- 作者：Y. Kobayashi;S. Ozaki;Y. Nakata;T. Nakamura
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- Thermal stability;
- Cu agglomeration;
- Low-k;
- Barrier metal oxidation;
- Fluoride residue;
- Ionization;
- diffusion;
7.Electromigration Void Nucleation and Growth Analysis Using Large-Scale Early Failure Statistics

机译：使用大规模早期故障统计数据的电迁移空白成核和生长分析
- 作者：M. Hauschildt;M. Gall;C. Hennesthal;G. Talut;O. Aubel;K.B. Yeap;E. Zschech
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- Electromigration;
- Cu Interconnects;
- Early Failure;
- Void Nucleation;
- Void Growth;
- Current Density Exponent;
- Large-Scale Statistics;
8.Design for Reliability of BEoL and 3-D TSV Structures - A Joint Effort of FEA and Innovative Experimental Techniques

机译：BEOL和3-D TSV结构可靠性设计 - FEA和创新实验技术的共同努力
- 作者：Jürgen Auersperg;Dietmar Vogel;Ellen Auerswald;Sven Rzepka;Bernd Michel
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- 3D-integration;
- copper-TSV;
- nonlinear FEA;
- BEoL;
- interface fracture mechanics;
9.Assessment Of Fracture And Elastoplastic Properties Of Thin And Very Thin Films

机译：评估薄薄膜和非常薄膜的裂缝和弹塑性性能
- 作者：M. Trueba;D. Gonzalez;I. Oca?a;M.R. Elizalde;J.M. Martinez-Esnaola;M.T. Hernandez;M. Haverty;G. Xu;D. Pantuso
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- thin films;
- microbeams;
- strength;
- toughnes;
10.Stress Management for 3D Through-Silicon-Via Stacking Technologies - the Next Frontier -

机译：3D通过硅通过堆叠技术的压力管理 - 下一个边疆 -
- 作者：Riko Radojcic;Matt Nowak;Mark Nakamoto
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- Stress Management;
- 3D Through-Silicon-Via Stacking Technologies;
- the Next Frontier;
11.Advanced Concepts for TDDB Reliability in Conjunction with 3D Stress

机译：TDDB可靠性的先进概念与3D压力结合
- 作者：Martin Gall;Kong Boon Yeap;Ehrenfried Zschech
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- Time-Dependent Dielectric Breakdown;
- BEoL;
- Failure Mechanisms;
- Dielectric Reliability;
- 3D IC Integration;
- Mechanical Stress;
- Diffusivity;
12.Characterization of Thermal Stresses and Plasticity in Through-Silicon Via Structures for Three-dimensional Integration

机译：通过三维集成结构的通过结构表征通过硅的热应力和可塑性
- 作者：Tengfei Jiang;Suk-Kyu Ryu;Jay Im;Rui Huang;Paul S. Ho
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- 3D integration;
- Through-silicon via (TSV);
- Thermo-mechanical reliability;
- FEA.;
13.MULTI-SCALE SIMULATION FLOW AND MULTI-SCALE MATERIALS CHARACTERIZATION FOR STRESS MANAGEMENT IN 3D THROUGH-SILICON-VIA INTEGRATION TECHNOLOGIES - EFFECT OF STRESS ON 3D IC INTERCONNECT RELIABILITY

机译：多尺度仿真流量和多尺度材料表征3D通过硅 - 通过集成技术的应力管理 - 应力对3D IC互连可靠性的影响
- 作者：Valeriy Sukharev;Ehrenfried Zschech
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- Simulation;
- FEA;
- Compact model;
- Materials characterization;
14.TCAD Modeling of Stress Impact on Performance and Reliability in 3D IC Structures

机译：三维IC结构中应力影响的TCAD模型
- 作者：Xiaopeng Xu;Aditya Karmarkar
- 会议名称：《International Workshop on Stress-Induced Phenomena in Microelectronics》 | 2014年
- TSV;
- bump;
- 3D IC;
- TCAD modeling;
- mechanical stress;
- carrier mobility;
- reliability;