Studies of trap generation in silicon-dioxide and electromigration in aluminum thin films.

摘要

The effects of HCl on trap generation in SiO;Electromigration in pure aluminum thin film is studied at high-current density and low-test temperature. The resistance of the aluminum line is measured during current stress. The following points are concluded from this study: (1) Due to the thermal resistances of the substrate and the package, the temperature at the thin film surface is higher than that at the ambient. This additional temperature rise has to be corrected in order to compare the data. (2) A damage relaxation is observed when the current is turned off; therefore, the lifetime of pulse operation cannot be obtained by dividing a duty factor from the lifetime of direct current operation. (3) The anode is damaged more seriously than the cathode in our samples.