Evolving microstructure: Mechanisms of electromigration in stressed aluminum-copper and copper films.

摘要

We report on a collective body of work wherein we have studied the mass transport phenomena which are likely to be operative during stress driven changes in microstructure arising from electromigration and stress voiding. Our goal is to understand such microstructural evolution leading to failure of the metal lines or interconnects associated with integrated electronic circuits or chips. This work, when complete, will lead to improved electronics performance and reliability and faster product development arising from accurate and predictive models of wearout phenomena. We report on the role of thermal induced strain leading to hole and hillock formation, the influence of grains structure on the reliability of Al- based interconnects, and the observation of counter-current electromigration of Ua in Al grain boundaries.