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Optimization of quantum well electroabsorption waveguide modulators.

机译:量子阱电吸收波导调制器的优化。

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摘要

Electro-optic waveguide modulators employing III-V compound semiconductor quantum wells were investigated and developed. These modulators are based on the Quantum Confined Stark Effect (QCSE). This effect includes electroabsorption and electrorefraction. For electroabsorptive waveguide modulators, a theoretical design algorithm was developed for optimizing the total performance in terms of four figures of merit: contrast ratio (CR), modulated optical throughput, drive voltage and bandwidth. The approach is to maximize the bandwidth/drive voltage ratio while satisfying a given CR and optical throughput. An experimental evaluation of devices based on the theoretical design was made using, for this purpose, the InGaAs/InAlAs quantum well material system. The modulator design embodies a novel approach using a large-core, multimode, passive waveguide. This is a simple and robust approach that reduces the coupling loss from a conventional single-mode input fiber without compromising other performance requirements. The MQW is embedded in a thin intrinsic active layer within the passive waveguide. The waveguide therefore has a small optical filling factor. The figures of merit for the material design of the quantum well structure were identified to be {dollar}Deltaalpha{dollar}/F and {dollar}Deltaalpha{dollar}/{dollar}alphasb{lcub}rm o{rcub}{dollar}, where {dollar}Deltaalpha{dollar} is the absorption change and F is the applied electric field. Experimental methods were developed for measuring the coupling efficiency, the optical filling factor ({dollar}gamma{dollar}) and the absorption coefficient ({dollar}alphasb{lcub}rm o{rcub}{dollar}) of the waveguide modulator, and for characterizing the material figures of merit. The experimental measurements support the underlying assumptions used in the theoretical treatment, and show that the passive, small-{dollar}gamma{dollar} waveguide design significantly improves the modulated optical throughput of the modulator compared with the conventional large-{dollar}gamma{dollar} design reported in the literature.
机译:研究和开发了采用III-V型化合物半导体量子阱的电光波导调制器。这些调制器基于量子受限斯塔克效应(QCSE)。该效应包括电吸收和电折射。对于电吸收波导调制器,开发了一种理论设计算法,用于根据四个品质因数优化总体性能:对比度(CR),调制光通量,驱动电压和带宽。该方法是在满足给定的CR和光通量的同时最大化带宽/驱动电压比。为此,使用InGaAs / InAlAs量子阱材料系统对基于理论设计的器件进行了实验评估。调制器设计体现了一种使用大芯多模无源波导的新颖方法。这是一种简单而强大的方法,可减少传统单模输入光纤的耦合损耗,而不会影响其他性能要求。 MQW嵌入在无源波导内的薄本征有源层中。因此,波导具有小的光学填充因子。量子阱结构的材料设计的优值被确定为{dollar} Deltaalpha {dollar} / F和{dollar} Deltaalpha {dollar} / {dollar} alphasb {lcub} rm o {rcub} {dollar} ,其中{dollar} Deltaalpha {dollar}是吸收变化,F是施加的电场。开发了用于测量波导调制器的耦合效率,光学填充系数({gamma {dollar})和吸收系数({alphasb {lcub} rm o {rcub} {dollar})的实验方法,以及用于表征物质品质因数。实验测量结果支持了理论处理中使用的基本假设,并显示出与传统的大{gamma} gamma {相比,无源小{gamma} gamma {dollar}波导设计显着提高了调制器的调制光吞吐量。文献中报道了美元设计。

著录项

  • 作者

    Chin, Mee Koy.;

  • 作者单位

    University of California, San Diego.;

  • 授予单位 University of California, San Diego.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1992
  • 页码 276 p.
  • 总页数 276
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

  • 入库时间 2022-08-17 11:50:09

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