首页> 外国专利> QUANTUM CONFINED STARK EFFECT ELECTROABSORPTION MODULATOR ON A SOI PLATFORM

QUANTUM CONFINED STARK EFFECT ELECTROABSORPTION MODULATOR ON A SOI PLATFORM

机译:SOI平台上的量子受限斯塔克效应电吸收调制器

摘要

An electroabsorption modulator. The modulator comprising an SOI waveguide; an active region, the active region comprising a multiple quantum well (MQW) region; and a coupler for coupling the SOI waveguide to the active region. The coupler comprising: a transit waveguide coupling region; a buffer waveguide coupling region; and a taper region; wherein, the transit waveguide coupling region couples light between the SOI waveguide and the buffer waveguide coupling region; and the buffer waveguide coupling region couples light between the transit waveguide region and the active region via the taper region.
机译:电吸收调制器。该调制器包括SOI波导;以及有源区,该有源区包括多量子阱(MQW)区;耦合器,用于将SOI波导耦合到有源区。该耦合器包括:过渡波导耦合区;和缓冲波导耦合区;和锥形区域;其中,过渡波导耦合区在SOI波导和缓冲波导耦合区之间耦合光。缓冲波导耦合区通过锥形区在传输波导区和有源区之间耦合光。

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