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A wavelength monitor based on electroabsorption in quantum well waveguide photodiodes.

机译:一种基于量子阱波导光电二极管中电吸收的波长监控器。

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摘要

A wavelength monitor, based on p-i-n quantum well waveguide photodiodes, and its application to fiber Bragg grating strain sensor have been demonstrated. Ridge waveguide photodiodes with five different quantum well structures have been de signed, fabricated and characterized. In a wavelength monitoring system that employed a single-segment photodiode, the waveguide photodiode was used as either a tunable edge filter or a wavelength selective photodetector. A wavelength resolution of 1 pm with an operating range of 18 nm was achieved with a GaAs/AlGaAs multiple quantum well device. In a wavelength monitoring system that employed a pair of in-line waveguide photodiodes, the photocurrent ratio of the two photodiodes varied linearly with wavelength in a region near the absorption band edge. A wave-length resolution of 0.4 pm was achieved with InGaAs/GaAs quantum well devices for TE-polarized light with intensities of about 30 muW and a signal averaging time of 0.2 seconds. An operating range of 40 nm was obtained by voltage tuning of the quantum wells. The photocurrent ratios in the in-line waveguide photodiodes were also used to determine the absorption coefficients of the photodiodes. The shifts of the exciton peak positions with the applied bias voltage showed fairly good agreements with the predictions of a variational theory. The photocurrent ratio of the in-line quantum well waveguide photodiodes showed strong polarization dependence. However, the separation between the absorption edges for the TE and TM polarizations was so large that this device could be used in the wavelength range near the absorption edge of the TE component even in the presence of a large TM component in the input. An optical fiber Bragg strain sensing system, that consists of a superluminescent diode, a 2 x 2 fiber coupler, a fiber Bragg grating and the waveguide detector, was assembled to demonstrate the application of the developed wavelength monitor. A strain resolution of 5 microstrain has been obtained with the fiber Bragg grating strain sensor. The grating strain sensor shows a linear response over a range of +/-2500 microstrain.
机译:已经证明了基于p-i-n量子阱波导光电二极管的波长监控器及其在光纤布拉格光栅应变传感器中的应用。具有五个不同量子阱结构的脊形波导光电二极管已经被设计,制造和表征。在采用单段光电二极管的波长监控系统中,波导光电二极管用作可调边缘滤波器或波长选择性光电探测器。 GaAs / AlGaAs多量子阱器件可实现1 pm的波长分辨率和18 nm的工作范围。在采用一对串联波导光电二极管的波长监视系统中,两个光电二极管的光电流比在吸收带边缘附近的区域中随波长线性变化。用InGaAs / GaAs量子阱器件获得的TE偏振光强度约为30μW,信号平均时间为0.2秒,波长分辨率为0.4 pm。通过量子阱的电压调谐获得40nm的工作范围。串联波导光电二极管中的光电流比也用于确定光电二极管的吸收系数。激子峰值位置随施加的偏置电压的变化与变分理论的预测显示出相当好的一致性。串联量子阱波导光电二极管的光电流比显示出强烈的偏振依赖性。但是,TE和TM偏振的吸收边缘之间的间隔非常大,即使在输入中存在较大TM分量的情况下,也可以在TE分量吸收边缘附近的波长范围内使用此设备。组装了由超发光二极管,2 x 2光纤耦合器,光纤布拉格光栅和波导检测器组成的光纤布拉格应变传感系统,以演示开发的波长监视器的应用。光纤布拉格光栅应变传感器已获得5微应变的应变分辨率。光栅应变传感器在+/- 2500微应变的范围内显示线性响应。

著录项

  • 作者

    Wu, Xiucheng.;

  • 作者单位

    McMaster University (Canada).;

  • 授予单位 McMaster University (Canada).;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 140 p.
  • 总页数 140
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:48:25

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