Design and implementation of a molecular beam epitaxy system for growth of III-IV semiconductors.

摘要

The design and implementation of a unique molecular beam epitaxy (MBE) system for III-V compound semiconductor growth, the UTEMG-I MBE system, is presented in this thesis. The MBE system has four ultra-high vacuum chambers for sample growth, analysis, processing and load-lock; with these, it is suitable for both conventional MBE growth, and many advanced forms of MBE growth, such as, atomic layer epitaxy, migration enhanced epitaxy, and our concept of laser assisted III-V compound semiconductor MBE growth. Besides MBE growth, many in situ analysis and processing techniques can be performed in this MBE system including reflection high energy electron diffraction analysis, Auger electron spectroscopy, ultra-violet photoelectron spectroscopy, e-gun evaporation/deposition, and electron cyclotron resonance plasma processing. Initial system verification experiment for the UTEMG-I MBE system focused on low temperature growth of GaAs. Characterizations using scanning electron microscopy, photoluminescence spectroscopy, photoreflectance spectroscopy and carrier lifetime measurements demonstrated that the low temperature grown GaAs was of state-of-the-art quality.