Single-photon ionization probing of semiconductor molecular beam epitaxy.

摘要

Molecular beam epitaxy (MBE) is a method of film deposition for growth of semiconductor devices. In situ monitoring of MBE is key to the understanding and improvement of film growth chemistry.;Single-photon ionization time-of-flight mass spectrometry (SPI-TOFMS) is an in situ probe that non-intrusively monitors incident and scattered gas phase growth species in real time during MBE. This technique, in which mass spectral cracking is avoided via single-photon ionization, can also be incorporated with simultaneous reflection high-energy electron diffraction (RHEED).;Simultaneous RHEED and SPI-TOFMS measurements of the real-time homoepitaxy of GaAs(100) with Ga and As;SPI-TOFMS has also been used to measure the scattered fluxes of As