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Single event effect characterization of new technology integrated circuits.

机译:新技术集成电路的单事件效应表征。

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摘要

This dissertation evaluates the parallel trends towards increased device susceptibility to Single Event Effects (SEE) and toward the application of commercial new technology semiconductor devices to space systems as well as airborne avionics. This effort is directed toward testing and analysis of commercial devices, establishing an electronic dialog among leaders in the field and simulation of basic circuit design solutions that could be applied commercially. Economic considerations and the desire for state of the art functionality are prime drivers toward the use of commercial grade devices for space and airborne systems. As device geometry shrinks, the specific capacitance decreases and thus the critical charge for a single event effect is reduced. Therefore, it is expected that Single Event Effects will become an important problem in terrestrial environment applications of the commercial devices. Our work shows that some old concepts in SEE characterization are no longer suitable for new technology integrated circuits. Some new SEE phenomena have been discovered during our test. A new SEE characterization model has been developed to better understand the problems. Laser simulation system has been developed and used for single event effect testing, and although it can not be considered as a substitute for heavy ion testing, it can be a great help for the design of radiation hardened integrated circuits.
机译:本文评估了并行趋势,即器件对单事件效应(SEE)的敏感性增加以及商用新技术半导体器件在航天系统以及航空电子设备中的应用。这项工作旨在测试和分析商用设备,在该领域的领导者之间建立电子对话,并模拟可以商用的基本电路设计解决方案。经济因素和对最新功能的需求是将商业级设备用于太空和机载系统的主要驱动力。随着器件几何尺寸的缩小,比电容减小,因此单事件效应的临界电荷减小。因此,期望单事件效应将成为商用设备的地面环境应用中的重要问题。我们的工作表明,SEE表征中的一些旧概念不再适用于新技术集成电路。我们的测试过程中发现了一些新的SEE现象。已经开发了新的SEE表征模型,以更好地理解问题。已经开发出了激光仿真系统,并将其用于单事件效果测试,尽管不能认为它可以代替重离子测试,但它对辐射硬化集成电路的设计有很大帮助。

著录项

  • 作者

    You, Zhong.;

  • 作者单位

    Texas A&M University.;

  • 授予单位 Texas A&M University.;
  • 学科 Engineering Electronics and Electrical.;Physics Radiation.;Engineering Nuclear.
  • 学位 Ph.D.
  • 年度 1998
  • 页码 99 p.
  • 总页数 99
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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