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The role of material uniformity and device geometry on cadmium zinc telluride room-temperature nuclear spectrometer performance .

机译:材料均匀度和器件几何形状对碲化镉锌室温核光谱仪性能的影响。

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摘要

Cadmium Zinc Telluride (Cd1-xZnxTe or CZT) is a relatively new semiconductor material which shows great promise as a room-temperature radiation detector. It was developed to operate in a regime between two mature technologies (scintillators and cryogenically cooled semiconductor devices). It is hoped that once mature, CZT radiation spectrometers will give better energy resolution than the current room temperature radiation detector technology (scintillators) and operate without cryogenic cooling, unlike high purity Ge (HPGe). The current state of CZT growth techniques poses two barriers to the production of inexpensive, large volume spectrometers. The material is often polycrystalline, and a large variation in the charge carrier transport properties is observed throughout an ingot. Additionally, even the best quality material usually exhibits hole transport properties which are barely adequate for a spectrometer. Overall, the material commercially available is often multi-grain with large variation in the electron and hole transport properties, which is suboptimal for most detector applications.;I have examined the effects of material non-uniformity on the performance of CZT radiation detectors. In particular, I have identified the effect a crystalline boundary will have on the performance of a CZT device. I have also performed a theoretical analysis on the expected performance as a function of charge transport properties. The theoretical discussion of the charge transport effects covers the range observed in currently available material and shows how improvements in hole transport will affect performance. Finally, I have examined several novel devices designed to compensate for the poor hole transport properties in CZT. These results along with several material characterization techniques are presented in this dissertation.
机译:碲化镉锌(Cd1-xZnxTe或CZT)是一种相对较新的半导体材料,作为室温辐射探测器具有广阔的前景。它被开发为在两种成熟技术(闪烁体和低温冷却的半导体器件)之间运行。希望CZT辐射光谱仪一旦成熟,将比当前的室温辐射探测器技术(闪烁器)提供更好的能量分辨率,并且无需像高纯Ge(HPGe)那样进行低温冷却即可运行。 CZT生长技术的当前状态对廉价,大体积光谱仪的生产构成了两个障碍。该材料通常是多晶的,并且在整个晶锭中观察到电荷载流子传输特性的巨大变化。另外,即使是最优质的材料,通常也具有空穴传输性质,这对于光谱仪而言几乎是不足的。总的来说,市售的材料通常是多晶粒的,在电子和空穴传输特性方面差异很大,这对于大多数检测器应用而言都不理想。我已经检查了材料不均匀性对CZT辐射检测器性能的影响。特别是,我已经确定了晶界对CZT器件性能的影响。我还对预期性能作为电荷传输性质的函数进行了理论分析。电荷传输效应的理论讨论涵盖了当前可用材料中观察到的范围,并显示了空穴传输的改进将如何影响性能。最后,我研究了几种新颖的设备,这些设备旨在补偿CZT中不良的空穴传输性能。本文给出了这些结果以及几种材料表征技术。

著录项

  • 作者

    Brunett, Bruce Andrew.;

  • 作者单位

    Carnegie Mellon University.;

  • 授予单位 Carnegie Mellon University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 183 p.
  • 总页数 183
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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