Spatial Mapping of Cadmium Zinc Telluride Materials Properties and Electrical211 Response to Improve Device yield and Performance

摘要

Cadmium zinc telluride has experienced tremendous growth in its application to211u001evarious radiation sensing problems over the last five years. However, there are 211u001estill issues with yield, particularly of the large volume devices needed for 211u001eimaging and sensitivity-critical applications. Inhomogeneities of various types 211u001eand on various length scales currently prevent the fabrication of large devices 211u001eof high spectral performance. This paper discusses the development of a set of 211u001echaracterization tools for quantifying these inhomogeneities, in order to develop 211u001eimprovement strategies to achieve the desired cadmium zinc telluride crystals for 211u001edetector fabrication.