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Low-power low-voltage high-speed delta-sigma analog-to-digital converters

机译:低功耗低压高速delta-sigma模数转换器

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摘要

The increasingly stringent requirements of today's communication systems and portable devices are imposing two challenges on the design of Analog-to-Digital Converters (ADC) and delta-sigma modulators (DeltaSigmaM) architecture in particular.;The first is the extension of the input frequency range to include applications where the input bandwidth exceeds the 1 MHz range.;This challenge in extending the operational speed of DeltaSigmaM is further rendered more complicated by the ever shrinking transistor dimension. As predicted by the Semiconductor Industry Association (SIA) Roadmap for CMOS technology, the transistor dimension will reach 0.05 mum in 2011. With this dramatic shrink in the transistor length, and as a result in the supply voltage, device modelling becomes ambiguous and circuit non-idealities more pronounced. The design of the main analog building blocks that minimize the time-to-market is therefore becoming very complicated.;These two issues will be addressed in this thesis, namely a new design method that will minimize the design cycle of delta-sigma analog-to-digital converters (DeltaSigma ADCs) intended for high-speed applications. This method will be demonstrated efficient in the implementation of two state-of-the-art modulators in terms of performance using a widely adopted figure of merit.;The validity of the top-down design methodology was verified through the fabrication of two prototype integrated circuits (ICs), both in TSMC 0.18 mum CMOS technology. In the first chip, a single-bit, fourth-order DeltaSigma ADC was implemented achieving more than 12-bit resolution. The second chip further validated the methodology to include higher resolution, in the range of 13 bits, multi-bit DeltaSigma ADCs. The experimental results from both prototype ICs closely mimic the system-level behavior of the designed modulator.
机译:当今通信系统和便携式设备的要求日益严格,尤其是对模数转换器(ADC)和delta-sigma调制器(DeltaSigmaM)体系结构的设计提出了两个挑战;首先是扩展输入频率范围包括输入带宽超过1 MHz范围的应用。晶体管尺寸的不断缩小使扩展DeltaSigmaM的工作速度的挑战变得更加复杂。正如半导体行业协会(SIA)的CMOS技术路线图所预测的那样,到2011年,晶体管的尺寸将达到0.05微米。由于晶体管长度的急剧减少以及电源电压的提高,器件的建模变得模棱两可,电路无法正常工作。 -理想更加明显。因此,最大限度地缩短产品上市时间的主要模拟构件的设计变得非常复杂。;本文将解决这两个问题,即一种新的设计方法,该方法将使delta-sigma模拟电路的设计周期最小化。用于高速应用的数字转换器(DeltaSigma ADC)。使用广泛采用的品质因数,将在性能方面证明该方法在实施两个最先进的调制器方面是有效的。;通过制造两个集成的原型,验证了自上而下的设计方法的有效性电路(IC),均采用TSMC 0.18微米CMOS技术。在第一个芯片中,实现了一位四阶DeltaSigma ADC,实现了12位以上的分辨率。第二块芯片进一步验证了该方法论,以包括在13位,多位DeltaSigma ADC范围内的更高分辨率。两种原型IC的实验结果都非常类似于所设计的调制器的系统级性能。

著录项

  • 作者

    Safi-Harab, Mouna.;

  • 作者单位

    McGill University (Canada).;

  • 授予单位 McGill University (Canada).;
  • 学科 Electrical engineering.
  • 学位 M.Eng.
  • 年度 2003
  • 页码 103 p.
  • 总页数 103
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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