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首页> 外文期刊>IEEE Transactions on Instrumentation and Measurement >Built-In Self-Test for Low-Voltage High-Speed Analog-to-Digital Converters
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Built-In Self-Test for Low-Voltage High-Speed Analog-to-Digital Converters

机译:低压高速模数转换器的内置自检

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This paper presents a built-in self-test (BIST) architecture for testing high-speed analog-to-digital converters (ADCs) with sampling rates in excess of 1 GHz. A methodology for performing mixed-mode BIST simulations is proposed, along with hardware for performing on-chip BIST. The architecture presented utilizes an on-chip read-only memory and allows for the generation of single-frequency as well as multiplefrequency test signals. The issues associated with BIST signal generation for low-voltage ADCs are presented. Simulations revealed that the spurious-free dynamic range of the sinusoidal signal generated from the BIST hardware was 25.28 dB with a frequency of 312.5 MHz and 19.88 dB with a frequency of 416.67 MHz. The proposed 8-b segmented current steering digital-to-analog converter was designed by IBM 130-nm complementary metal–oxide–semiconductor process. The effective chip area is 0.51 $hbox{mm}^{2}$. The design measurement results show a converter rate of 1.25 GHz, a gain bandwidth of 220 MHz, and a consumption of 28.5 mA for a power dissipation of 39.5 mW.
机译:本文提出了一种内置自检(BIST)架构,用于测试采样率超过1 GHz的高速模数转换器(ADC)。提出了一种用于执行混合模式BIST仿真的方法,以及用于执行片上BIST的硬件。提出的架构利用片上只读存储器,并允许生成单频和多频测试信号。提出了与低压ADC的BIST信号生成相关的问题。仿真显示,从BIST硬件产生的正弦信号的无杂散动态范围在频率为312.5 MHz时为25.28 dB,在频率为416.67 MHz时为19.88 dB。拟议的8-b分段电流控制数模转换器是由IBM 130纳米互补金属氧化物半导体工艺设计的。有效筹码面积为0.51 $ hbox {mm} ^ {2} $。设计测量结果表明,转换器速率为1.25 GHz,增益带宽为220 MHz,功耗为29.5 mA,功耗为39.5 mW。

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