Exploring new dielectrics to improve switching speeds of carbon nanotube memory devices.

摘要

The hysteresis in carbon nanotube field effect transistor's (CNTFET) current vs. gate voltage curves can be used for memory devices. Testing possible changes to device structure and design, could improve both their endurance and switching speed characteristics. Preliminary work in the literature shows that the type of dielectric layer is a large factor in the device switching speed. Here, a new dielectric layer and a different device design will be tested to study how they affect the device performance. Results are compared to devices that are commercially available.