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Built-in self-test solutions for high and low frequency analog/mixed-signal circuits.

机译:内置的自测解决方案,用于高频和低频模拟/混合信号电路。

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摘要

The scaling and integration trend in the IC world merges many blocks into a single system-on-chip (SoC) or system-in-package (SiP) concepts. Although these concepts increase the performance and minimize the area overhead, their testing on ATE is not fully accomplished due to limited pin count and high-speed requirements. Only 20-30% of area in these chips is analog/mixed-signal (AMS), but they incur the 70-80% of the test effort. In this context, built-in self-test (BIST) solutions are essential for AMS blocks.;In this work, two widely utilized blocks, low-dropout regulators (LDO) and phase-locked loops (PLL), are taken under the scope for BIST applicability since they are indispensable SoC components for generation of low noise, stable power and clock signals. Moreover, they operate at low & high frequency ends of the AMS domain.;LDO steady state current is a critical parameter for their lifetime and overall power dissipation. In this work, an on-chip steady-state current test is realized using IDDQ testing concept via built-in current sensors (BICS) in a BIST environment which minimizes ATE dependency and associated test time (> 10x). In order to increase PLL reliability, IDDQ BIST mechanism via programmable BICS is utilized on charge-pumps and 97% fault coverage is achieved. Moreover, loop parameter characterization BISTs are realized for PLLs due to their key role in PLL performance control. The characterization is accomplished by utilizing two separate BIST methodologies, i.e. current and gain extraction BISTs.;The current BIST is realized with two approaches, i.e. ratio based and architecture independent IDDQ BISTs. The former is designed to check vital PLL design parameters with respect to predefined boundaries. The latter is an on-chip current measurement tool providing a digital representation for circuit-under test current. Moreover, a self-correction mechanism is also integrated. On the other hand, the gain extraction BIST is implemented to fully control loop parameters. Two approaches, i.e. non-intrusive and intrusive are investigated. Non-intrusive method is observed to be impractical for the PLL under test. Therefore, an intrusive method with minimum degradation (3.25%) and highest accuracy (3.1%) is realized.
机译:IC世界的缩放和集成趋势将许多模块合并为单个片上系统(SoC)或系统级封装(SiP)概念。尽管这些概念提高了性能并最大程度地减少了面积开销,但由于引脚数量有限和高速要求,它们在ATE上的测试尚未完全完成。这些芯片中只有20%至30%的面积是模拟/混合信号(AMS),但它们却承担了70-80%的测试工作。在这种情况下,内置的自测(BIST)解决方案对于AMS块至关重要。在这项工作中,采用了两个广泛使用的块:低压差稳压器(LDO)和锁相环(PLL)。由于BIST是生成低噪声,稳定的电源和时钟信号必不可少的SoC组件,因此具有BIST适用性。此外,它们在AMS域的低频和高频端工作。LDO稳态电流是其寿命和整体功耗的关键参数。在这项工作中,使用IDDQ测试概念通过BIST环境中的内置电流传感器(BICS)实现了片上稳态电流测试,从而最大程度地降低了ATE依赖性和相关测试时间(> 10x)。为了提高PLL的可靠性,在电荷泵上采用了通过可编程BICS的IDDQ BIST机制,并实现了97%的故障覆盖率。此外,由于其在PLL性能控制中的关键作用,因此可以为PLL实现环路参数表征BIST。通过利用两种独立的BIST方法(即电流和增益提取BIST)来完成表征;当前的BIST通过两种方法来实现,即基于比率和与体系结构无关的IDDQ BIST。前者旨在检查有关预定义边界的重要PLL设计参数。后者是一种片上电流测量工具,为被测电路的电流提供数字表示。此外,还集成了自校正机制。另一方面,实现增益提取BIST以完全控制环路参数。研究了两种方法,即非侵入式和侵入式。观察到非侵入式方法对于被测PLL不切实际。因此,实现了具有最小的退化(3.25%)和最高的准确性(3.1%)的介入方法。

著录项

  • 作者

    Maltabas, Samed.;

  • 作者单位

    University of Massachusetts Lowell.;

  • 授予单位 University of Massachusetts Lowell.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 194 p.
  • 总页数 194
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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