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Growth of multiferroic oxides by molecular-beam epitaxy.

机译:通过分子束外延生长多铁氧化物。

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摘要

Multiferroic materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have attracted a great deal of attention due to their physical origin and potential application in novel electronic devices. In this dissertation, the synthesis and properties of multiferroic thin films grown by molecular-beam epitaxy have been studied to understand the nature of multiferroism and therefore to explore a new route to creating strong multiferroic materials.;Epitaxial thin films of BiMnO3 have been grown by a reactive molecular-beam epitaxy. The pressure-temperature region for the adsorption-controlled growth region was calculated and experimentally established by reflection high energy electron diffraction and x-ray diffraction. Under the optimal growth region, phase-pure and epitaxial BiMnO3 films with o rocking curve full width at half maximum values as narrow as 11 arc sec (0.003"a) were synthesized. The structural and magnetic properties of stoichiometric films are found to depend on the oxygen activity used during growth. Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1+/-0.1 eV.;Phase-pure, stoichiometric, unstrained, and epitaxial (001)-oriented EuTiO3 thin films have been grown on (001) SrTiO3 substrates by a reactive molecular-beam epitaxy. Magnetization measurements show antiferromagnetic behavior with TN = 5.5 K. Spectroscopic ellipsometry measurements reveal that unstrained EuTiO3 thin films have a direct optical band gap of 0.93 +/- 0.07 eV.; Strained, epitaxial (001)-oriented EuTiO3 films have been grown on (001) LSAT and (110) DyScO3 substrates in a reactive molecular-beam epitaxy to induce -0.9% and +1.1% of biaxial strain, respectively. A full width at half maximum of a rocking curve is as narrow as 8 arc sec (0.002°). As the first-principles calculations predict, the strained EuTiO 3 film on (110) DyScO3 exhibits simultaneous ferroelectricity and ferromagnetism. Optical second harmonic generation reveals that this film experiences a phase transition at ∼250 K to polar point group in agreement with theory, and in this state domain switching by electric fields is observed. Magneto-optic Kerr effect and superconducting quantum interference device measurements show that the strained EuTiO3 film on (110) DyScO 3 is ferromagnetic with TC = 4.6 K.
机译:同时具有铁电性和铁磁性的多铁性材料由于其物理起源和在新型电子设备中的潜在应用而引起了广泛的关注。本文研究了分子束外延生长的多铁性薄膜的合成和性能,以了解多铁性的本质,从而探索了一种制备强多铁性材料的新途径。反应性分子束外延。通过反射高能电子衍射和X射线衍射计算并实验确定了吸附控制的生长区域的压力-温度区域。在最佳的生长区域,合成了纯的或外延的BiMnO3薄膜,其摇摆曲线的全宽度在一半处窄至11弧秒(0.003“ a),其化学曲线的全宽度在一半左右。发现化学计量的薄膜取决于光吸收测量表明,BiMnO3具有1.1 +/- 0.1 eV的直接带隙;在(())上生长了相纯,化学计量,无应变和外延(001)取向的EuTiO3薄膜。 001)反应性分子束外延生长SrTiO3衬底,磁化测量显示TN = 5.5 K时反铁磁行为;椭圆偏振光谱测量表明,未应变的EuTiO3薄膜具有直接光学带隙为0.93 +/- 0.07 eV .;应变为外延(001)取向的EuTiO3薄膜已在(001)LSAT和(110)DyScO3衬底上以反应性分子束外延生长,分别诱导了-0.9%和+ 1.1%的双轴应变,半峰全宽摇摆曲线的um窄至8弧秒(0.002°)。如第一性原理计算所预测,(110)DyScO3上的应变EuTiO 3膜同时显示铁电性和铁磁性。光学二次谐波的产生表明,该膜与理论相符,在约250 K处经历了到极性基团的相变,并且在此状态域中观察到电场的切换。磁光Kerr效应和超导量子干涉装置的测量结果表明,(110)DyScO 3上的应变EuTiO3薄膜是铁磁性的,TC = 4.6 K.

著录项

  • 作者

    Lee, June Hyuk.;

  • 作者单位

    The Pennsylvania State University.;

  • 授予单位 The Pennsylvania State University.;
  • 学科 Engineering Materials Science.;Nanotechnology.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 143 p.
  • 总页数 143
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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