MOLECULAR-BEAM CRYSTAL GROWTH DEVICE AND CRYSTAL GROWTH METHOD

摘要

PURPOSE:To grow a high-purity thin-film crystal with good workability by cracking a raw gas to be cracked in a plasma chamber and introducing the cracked gas into a crystal growth chamber while preventing the intrusion of other raw gases not to be cracked into the plasma chamber. CONSTITUTION:Two or more kinds of raw gases are introduced into the crystal growth chamber 1, and a thin-film crystal (e.g. GaAs crystal is grown on a substrate 5 by molecular-beam crystal growth. In this case, the raw gas 6 to be cracked (e.g. gaseous arsine) among the raw gases is introduced into the plasma chamber 13 to crack the gas into a low-order polyatomic molecule or a monoatomic gas, and the product is then introduced into the growth chamber 1 from a discharge port 14. Since the intrusion of other gases into the plasma chamber 13 is controlled in this way, the partial pressure of the raw gas in the plasma chamber 13 is controlled more than 10 times that of other raw gases in the vicinity of the discharge port 14, and crystal growth is carried out.