Electrical Properties of Zn(Mn,Co)O films grown by Pulsed Laser Deposition Method

摘要

High quality ZnO films were made by using a pulsed laser deposition (PLD) system. Through a same method magnetic element doped Zn(Mn,Co)O films were grown. An XRD measurement was tried and the result showed a single crystal of wurtzite structure. A capacitance-voltage measurement showed that the ZnMnO has electrical properties of an n-type semiconductor, and carrier concentration is 5 × 10~(18) cm~(-3). From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as E_c-0.62 eV and E_c-0.13 eV, respectively. The electrical measurement of the ZnCoO films showed meaningless results because of its high conductance.