The closed - form solutions for the breakdown voltages of 6H-SiC reachthrough diodes

摘要

The closed-form anlaytic solutions for the breakdown voltage of 6H-SiC RTD, reachthrough diode, having the structure of p~+-n~-n~+, are successfully derived by solving the impact ionization integral using effective ionization coefficient in the reachthrough condition. In the region of the lowly doped epitaxial layer, the breakdown voltages of 6H-SiC RTD nearly constant with the increased doping concentration. Also the breakdown voltages of 6H-SiC RTD decrease, in the region of the highly doped epitaxial layer, which coincides with Baliga's eq.[1].