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HIGH BREAKDOWN VOLTAGE DIODE AND METHOD OF FORMING SAME
HIGH BREAKDOWN VOLTAGE DIODE AND METHOD OF FORMING SAME
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机译:高击穿电压二极管及其形成方法
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摘要
A multiple layer overvoltage protection device is provided. The method begins by providing a substrate having a first impurity concentration of a first conductivity type to define a mid-region layer. A dopant of a second conductivity type is introduced into the substrate with a second impurity concentration less than the first impurity concentration. An upper base region having a second type of conductivity is formed on the upper surface of the mid-region layer. A lower base region layer having a second type of conductivity is formed on a lower surface of the mid-region layer. A first emitter region having a first type of conductivity is formed on a surface of the upper base region layer. A first metal contact is coupled to the upper base region layer and a second metal contact is coupled to the lower base region layer.
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