Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor

摘要

We report a novel metal stanogermanide contact metallization process for high-mobility germanium-tin (Ge0.947Sn0.053 or GeSn) channel p-MOSFETs. Nickel-Platinum (NiPt) alloy was used to react with GeSn to form a multi-phase Ni and Pt stanogermanide [NiGeSn+Ptx(GeSn)y] contact on epitaxial Ge0.947Sn0.053. Rapid thermal annealing of co-sputtered Ni and Pt on GeSn/Ge (100) at temperatures from 350 °C to 550 °C in N2 was used for the stanogermanide formation. Compared with nickel stanogermanide (NiGeSn) contact, the Pt-incorporated contact, i.e. NiGeSn+Ptx(GeSn)y, exhibits enhanced thermal stability in a wide range of formation temperatures.