Z²-FET: A zero-slope switching device with gate-controlled hysteresis

摘要

We present a novel switching device named Z²-FET that features zero subthreshold swing and zero impact ionization. The device is built in fully-depleted silicon-on-insulator (FD-SOI) technology and is demonstrated to switch sharply with the subthreshold slope (SS) <1 mV/dec and an ION/IOFF current ratio > 10¹⁰. The device further shows large hysteresis in drain current-drain voltage (ID-VD) domain with the turn-on voltage (VON) linearly controlled by gate voltage (VG). Simulation confirms that the operation of the device is determined by the positive feedback between the flow of carriers and their injection barriers.