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A Multistep Extrapolated S-Parameter Model for Arbitrary On-Chip Interconnect Structures

机译:任意片上互连结构的多步外推S参数模型

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Accurate high-frequency interconnect models are needed for the precise estimation of signal delays, crosstalk, and energy losses in complex on-chip communication structures, such as hierarchical bus architectures and networks-on-chip. In this chapter we introduce a computationally-efficient wide-bandwidth characterization method based on an incremental extrapolation of S-parameters for arbitrary interconnect structures. Our method defines a systematic set of a priori parameter extractions and performs on-demand multistep extrapolations for interconnect segments with specified wire length, widths, spacings, metal layer, and neighboring routing information. Experimental evaluations show a maximum absolute error of less than 2·10~(-2) (magnitude) and 7 degrees (angle) between our model and an industry-standard full-wave field simulator for a 90-nm CMOS process. We consistently enforce the passivity of the admittance matrices for each set of measured or generated parameters to eliminate the possible errors introduced during parameter measurements and extrapolation. Circuit-level simulations with the extrapolated model show a maximum signal delay error of less than 12.5% across multiple metal layers and wire configurations.
机译:需要精确的高频互连模型来精确估计复杂的片上通信结构(例如分层总线体系结构和片上网络)中的信号延迟,串扰和能量损耗。在本章中,我们介绍了一种基于S参数增量外推的任意互连结构的高效计算的宽带表征方法。我们的方法定义了一组系统的先验参数提取,并针对具有指定线长,宽度,间距,金属层和相邻布线信息的互连段执行按需多步外推。实验评估表明,我们的模型与90nm CMOS工艺的行业标准全波场模拟器之间的最大绝对误差小于2·10〜(-2)(大小)和7度(角度)。对于每个测量或生成的参数集,我们始终如一地强制导纳矩阵的无源性,以消除在参数测量和外推过程中引入的可能误差。使用外推模型进行的电路级仿真显示,跨多个金属层和导线配置的最大信号延迟误差小于12.5%。

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