AlGaInP single quantum well laser diodes

摘要

Abstract: The properties and low pressure organometallic vapor phase epitaxy of Ga$-x$/In$- 1$MIN@x$/P/(AlGa)$-0.5$/In$-0.5$/P quantum well (QW) laser diode heterostructures with Al$-0.5$/In$-0.5$/P cladding layers, and having a wavelength of 614 $LS $lambda $LS 690 nm, are described. At longer wavelengths ($lambda $GRT 660 nm), threshold current densities under 200 A/cm$+2$/ and efficiencies greater than 75% result from a biaxially compressed GaInP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGaInP heterostructures, good 630 nm band performance, and extension into the 610 nm band, is achieved with strained, single QW active regions. !21