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Epitaxial growth of LiNbO_3 on #alpha#Al_2O_3(0001)

机译:LiNbO_3在#alpha#Al_2O_3(0001)上的外延生长

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LiNbO_3 films have been grown on #alpha#Al_2O_3(0001) by pulsed laser deposition. Their structural aspects have been studied by using transmission electron microscopy. Different stages of the film formation have been observed: nucleation-growth of isolated pyramids limited by the {0112} faces, coalescence of the pyramids giving rise to flat aggregates and formation of continuous films. Misfit dislocations relaxing the misfit strain at the deposition temperature have been observed. However, strain states have been found. They are dependent on the film morphology: inhomogeneous elastic strain field in isolated pyramids, mechanical twinning and cracks in continuous films. It is shown that in both cases, the strain state corresponds to the relaxation of stresses occurring at the film/substrate interface during the cooling stage from deposition to room temperature, due to a large difference in thermal expansion coefficients of LiNbO_3 and #alpha#Al_2O_3.
机译:LiNbO_3膜已通过脉冲激光沉积在#alpha#Al_2O_3(0001)上生长。通过使用透射电子显微镜已经研究了它们的结构方面。已经观察到膜形成的不同阶段:受{0112}面限制的孤立的金字塔的形核-生长,金字塔的聚结导致平坦的聚集体和连续膜的形成。已经观察到错配位错在沉积温度下松弛了错配应变。但是,已经发现应变状态。它们取决于膜的形态:孤立的金字塔中的不均匀弹性应变场,机械孪晶和连续膜中的裂纹。结果表明,在两种情况下,由于LiNbO_3和#alpha#Al_2O_3的热膨胀系数差异很大,应变状态对应于在从沉积到室温的冷却阶段中在膜/基底界面处出现的应力松弛。 。

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