20nm Linewidth Nanoimprint Mold Prepared by Selectively Etched Multilayer-thin Film

摘要

A novel method to prepare nanomolds is reported, which is using multilayer thin-film deposition technique. A-Si/SiNx multilayer thin film is deposited on Si substrate in the conventional plasma enhanced chemical vapour deposition (PECVD) system. Then the relievo structure of alternative strips and grooves can be obtained on the cleaved cross-section of multilayer thin film by selective etching process. The strips of the etched sample have smooth and vertical sidewalls with small roughness. Due to the slow deposition rate, the thickness of the sublayer, therefore the size of the strips and grooves can be controlled on the nanometer scale by altering deposition time. The smallest width we get by now is the 20nm strips and 20nm grooves.