Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)

摘要

High-dose aluminum-ion (Al~+) implantation into 4H-SiC (11-20) and (0001) has been investigated. Surface morphologies of implanted (0001) samples were improved by annealing with a graphite cap. Implant-dose dependence and annealing-time dependence of electrical properties are examined by Hall-effect measurements. A low sheet resistance of 2.3 kΩ/sq. was obtained in (0001) by high-dose Al~+ implantation at 500 ℃ with a dose of 3.0 x 10~(16) cm~(-2) and high-temperature annealing at 1800 ℃ for a short time of 1 min. In the case of (11-20), even room-temperature implantation brought a low sheet resistance below 2 kΩ/sq. after annealing at 1800 ℃.