Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH_3SiH_3-gas source free jet

机译：使用单个CH_3SiH_3-气体源自由射流形成硅基量子器件的Si / SiC异质结构

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We have investigated the formation and current-voltage characteristics of Si-dots/SiC multilayer heterostructures on p~+Si(100) substrates by means of supersonic free-jet chemical vapor deposition using a single gas source CH_3SiH_3. Si-dots were successfully deposited on epitaxial SiC thin films on Si(100) with assistance of a tungsten hot filament. Negative deferential resistance was observed in the current-voltage curve of SiC/Si-dot/SiC measured by an atomic force microscope using a gold-coated conductive cantilever. The observed current-voltage characteristics can be attributed to the hole resonant tunneling through the SiC double barriers.

机译：我们已经研究了使用单气源CH_3SiH_3的超音速自由喷射化学气相沉积法在p〜+ Si（100）衬底上形成Si-dots / SiC多层异质结构和电流-电压特性。在钨丝的帮助下，将Si点成功地沉积在Si（100）上的外延SiC薄膜上。在使用镀金的导电悬臂的原子力显微镜测量的SiC / Si-dot / SiC的电流-电压曲线中观察到负的抗性。观察到的电流-电压特性可以归因于穿过SiC双势垒的空穴共振隧穿。

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《Symposium Proceedings vol.815; Symposium on Silicon Carbide 2004 - Materials, Processing and Devices; 20040414-15; San Francisco,CA(US)》|2004年|P.83-88|共6页
会议地点 San FranciscoCA(US)
作者
Ryota Ohtani; Yoshifumi Ikoma; Teruaki Motooka;
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Department of Materials Science and Engineering, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, JAPAN;

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正文语种 eng
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机译：用于高速电子器件的减少应变硅基异质结构

Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH_3SiH_3-gas source free jet

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