ELABORATION OF h-BN SHEATHED β-SiC NANOCABLES

摘要

h-BN sheathed β-SiC nanocables were synthesized under argon at 1200℃ by the direct thermal treatment of a silicon powder mixed with turbostratic boron nitride. The structure and the chemical composition of these nanocables have been investigated by HRTEM, EDX and EELS. They have a diameter ranging from 10 to 80 nm. The core of these nanocomposites is composed of pure cubic silicon carbide and the outer layers have been shown to be hexagonal boron nitride planes, set in a parallel direction to the nanocables axis.