Properties of polysilicon films oxidized in inductively coupled plasma and its effect onthin-film transistors

摘要

We investigated the properties of polycrystalline silicon (poly-Si) films oxidized in inductively coupled plasma (ICP) and the characteristics of poly-Si thin film transistors (TFTs) with an ICP/LPCVD gate oxide. The ICP oxidation reduced the interface traps and passivated dangling bonds by hydrogen incorporation. The ICP oxidation did not change the roughness of the Si/SiO_2, while thermal oxidation increased th roughness largely. The characteristics of the TFTs with ICP/PLCVD oxide were improved due to the reduced inteerface trap density.