Pretreatment method of polysilicon to analyzing of Inductively Coupled Plasma and ICP analyzing method of polysilicon

摘要

The present invention relates to a polysilicon pretreatment method for inductively coupled plasma (ICP) analysis, and the present invention is an ICP interferent substance (impurity) because it can minimize or completely remove hydrofluoric acid as an impurity during analysis. By preventing the occurrence of isotopes due to the silicon component (Si), it is possible to greatly improve the analysis reliability, as well as to prevent the problem of adsorption of silicon ionized by plasma to the ICP cone and analysis time There is an advantage that can be reduced.