Electrical characterization of beryllium doped low temperature mbe grown GaAs

摘要

The electrical properties of low temperature MBE grown GAAs (LT-GaAs) int he n-i-n configuration have been studied. The mechanism of current rise in beryllium doped LT-GaAs is found to fit Frenkel-Poole type emission with a barrier height of 0.26 eV. However, this model does not fit undoped LT-GaAs. The breakdown field is considerably higher (up to 5.2~* 10~5 V/cm) for beryllium doped films than undoped films, and depends on both growth temperature and beryllium concentration. Beryllium doping is also found to increase the resistivity of the preannealed films to values > 10~9 OMEGA -cm.