Characterization of Gas-passivated Quantum-well laser diodes

摘要

The degradation of AlGaAs/GaAs diode laser performance during operation is typically due to catastrophic optical damage of the facets caused when thermal runaway occurs. These heating effects are due to the presence of non-radiative recombination sites at and near the facets. MOCVD GaS is deposited on the facets of 825-nm ridge waveguide AlGaAs/GaAs quantum-well laser diodes as an electronic passivation to reduce the number of surface states available for non-radiative recombination. For passivated devices, a peak pulsed power nearly double that of unpassivated devices was avhieved. The passivation process on other optical characteristics of the laser diodes will also be discussed.