Optimized sulfur treatment of AlGaAs surfaces: application to the passivation of dry-etched AlGaAs laser facets

摘要

As determined by XPS, the surface chemistry of Al_(0.4)Ga_(0.6)As is reported after successive Na_2S/(NH_4)_2S treatments. The striking features are the total surface deoxidization, the absence of elemental arsenic and the neutralization of most of the dangling bonds by the formation of As-S and Ga-S surface bonds.