Department of Materials Science and Engineering, National Chiao Tung University,R403, MIRC. 1001 University Rd., Hsinchu, Taiwan 30010, R.O.C.;
Department of Materials Science and Engineering, National Chiao Tung University,R403, MIRC. 1001 University Rd., Hsinchu, Taiwan 30010, R.O.C.;
Department of Materials Science and Engineering, National Chiao Tung University,R403, MIRC. 1001 University Rd., Hsinchu, Taiwan 30010, R.O.C.;
Department of Materials Science and Engineering, National Chiao Tung University,R403, MIRC. 1001 University Rd., Hsinchu, Taiwan 30010, R.O.C.;
Department of Materials Science and Engineering, National Chiao Tung University,R403, MIRC. 1001 University Rd., Hsinchu, Taiwan 30010, R.O.C.;
Department of Materials Science and Engineering, National Chiao Tung University,R403, MIRC. 1001 University Rd., Hsinchu, Taiwan 30010, R.O.C.;
机译:在GaAs衬底上用简单的工艺制造80nm T栅高铟In_(0.7)Ga_(0.3)As / In_(0.6)Ga_(0.4)As复合沟道mHEMT
机译:0.15μm栅长In_(0.4)Al_(0.6)As / In_(0.4)Ga_(0.6)As MHEMT的热行为研究
机译:在具有超薄非晶In_(0.6)Ga_(0.4)As缓冲层的GaAs衬底上生长的In-(0.3)Ga_(0.7)As质量得到提高的薄膜
机译:用于W波段应用的低成本有机基板上的MEMT装置的IN_(0.6)GA_(0.4)的倒装芯片封装
机译:在无铅组装环境中开发小间距(0.4 mm)层叠封装器件的组装工艺。
机译:Dy3Co0.6Cu0.4Hx添加剂在控制Nd-Fe-B烧结磁体的组织和磁性能中的应用
机译:In_(0.75)Ga_(0.25)as对Gaas亚微米环及其应用 相干纳米电子器件