Advanced CVD Silicon Carbide Barrier Technology for Protection from Detrimental Gases

摘要

Plasma enhanced chemical vapor deposition (PECVD) processes have been developed to produce prototype barrier coatings. The strategy used is based on a combination of molecular precursor design and advanced plasma technology, and represents a route to an effective barrier solution. Room temperature silicon carbide processes have been established on several reactor systems. The impact of process operating factors on the structure and barrier performance has been analyzed and a wide range of tunability has been ascertained. A metrology has been developed to estimate the optical, mechanical, and relevant barrier application properties. In addition, coatings have been analyzed for subnanometer structural defects by Positronium Annihilation Lifetime Spectros-copy (PALS). Based on PALS results, possible structural models of different barrier layers have been elaborated. Significant progress in barrier performance (WVTR in the range of 10~(-4) g/m~2/day) has been demonstrated.