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机译:中子辐照对PECVD技术制备的非晶碳化硅和氮掺杂碳化硅薄膜电学特性的影响
Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava, Slovakia;
Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava, Slovakia;
Joint Institute for Nuclear Research, Joliot-Curie 6,141980 Dubna, Moscow Region, Russian Federation;
Joint Institute for Nuclear Research, Joliot-Curie 6,141980 Dubna, Moscow Region, Russian Federation;
Polymer Institute, Slovak Academy of Sciences, Dubravska cesta 9, 84541 Bratislava, Slovakia;
Joint Institute for Nuclear Research, Joliot-Curie 6,141980 Dubna, Moscow Region, Russian Federation;
Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava, Slovakia,Joint Institute for Nuclear Research, Joliot-Curie 6,141980 Dubna, Moscow Region, Russian Federation;
Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 84104 Bratislava, Slovakia;
Joint Institute for Nuclear Research, Joliot-Curie 6,141980 Dubna, Moscow Region, Russian Federation;
neutron irradiation; plasma-enhanced chemical vapor deposition; SiC; thin films;
机译:PECVD制备的非晶碳化硅薄膜的性能
机译:碳含量和等离子体功率对PECVD沉积氢化非晶碳化硅薄膜室温光致发光特性的影响
机译:使用两种不同的RF模式通过PECVD技术制备的Au / a-SiC / Si异质结构中非晶碳化硅的行为
机译:激光退火对PECVD制备的非晶碳化硅膜的影响
机译:使用直流鞍场PECVD制备的氢化非晶碳化硅,用于光伏应用。
机译:通过快速热退火工艺增强氢化非晶碳化硅薄膜的光致发光
机译:PECVD纳米晶碳化硅薄膜的结构和物理特性
机译:通过液体外延和溅射制备的α和β碳化硅薄膜,