Optoelectronic Device System RD Center, Kanazawa Institute of Technology 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 JAPAN;
Optoelectronic Device System RD Center, Kanazawa Institute of Technology 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 JAPAN;
Optoelectronic Device System RD Center, Kanazawa Institute of Technology 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 JAPAN;
photoluminescence; electroluminescence; (La_(1-x)Ga_x)_2O_3; phosphor; thin films; rare earth; Bi;
机译:磁控溅射制备稀土掺杂La_2O_3:Bi荧光粉薄膜发射光的色彩控制
机译:MF双磁控溅射在氧气氛中制备的等离子显示面板ITO薄膜的特性
机译:射频磁控溅射工艺制备的功能氧化锌薄膜的等离子体特性与物理性能的关系
机译:LA_(1-x)SR_XMNO_3(X = 0.2和0.33)磁辐射薄膜材料的热致变色和磁性之间的相关性,由磁控溅射制备
机译:通过直角磁控溅射制备的生物医学应用羟基磷灰石薄膜的表征。
机译:射频磁控溅射制备(MgAl)共掺杂ZnO薄膜的光电性能研究与研究
机译:SRTI 1- x sum> sc x sum> o 3 sub>薄膜的结构和光学性质由RF磁控溅射制备