USE OF DIODE DIAGNOSTICS FOR SILICON WAFER QUALITY CHARACTERIZATION; EFFECT OF COP ON PN JUNCTION LEAKAGE

摘要

A newly developed measurement method of pn junction leakage current was applied to several types of silicon wafers, such as normal CZ, hydrogen annealed CZ, and epitaxial wafers, for ultra-fine MOS device application. The distributions of junction leakage current was found to be dependent on the density of COP(or LSTD) in the subsurface of the wafers measured. Higher leakage current was confirmed to be caused by COP in the subsurface by one-to-one analysis combined with laser topography and TEM. The magnitude of the leakage current due to COP was found to be dependent on the size of COP, and g-r centers due to dangling bonds at the surface of COP was attributed to the cause of higher leakage currents. The effect of COP on ULSI performance was emphasized from junction leakage point of view.