Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield SI 3JD, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield SI 3JD, UK;
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield SI 3JD, UK;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
Molecular beam epitaxy; quantum dots; lasers; silicon photonics;
机译:Si,Ge / Si和硅绝缘子上锗(GeOI)衬底上以1.3 n波段发射的InAs / GaAs量子点在硅光子学上的生长
机译:硅光子上绝缘子上锗衬底上InAs / GaAs量子点的生长
机译:硅上的电泵浦连续波III-V量子点激光器
机译:将III-V量子点激光器集成在硅光子硅基板上
机译:硅光子学高性能量子点激光器的CMOS集成
机译:使用光流微泡操作将III-V半导体激光器混合集成在硅波导上
机译:将III-V量子点激光器集成在硅光子硅基板上
机译:硅mCm基板,用于集成III-V光子器件和CmOs IC