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Inductively Coupled Plasma etching of Germanium Tin for the fabrication of photonic components

机译:锗锡的电感耦合等离子体刻蚀,用于制造光子组件

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摘要

The demonstration of a CMOS compatible laser working at room temperature has been eagerly sought since the beginning of silicon photonics. Although bulk Germanium (Ge) is an indirect bandgap material, Tin (Sn) can be incorporated into it to turn the resulting alloy into a direct band-gap semiconductor. Recently, lasing was demonstrated at cryogenic temperatures using thick GeSn layers with Sn contents of 8.5% and above. Optical micro-cavities were later added to reduce the laser threshold. Here, an under-etching of thick GeSn layers selectively with regard to Ge confines optical modes and relaxes the compressive strain built inside the layers, resulting in more direct band-gaps behavior. Such photonic components rely on technological processes dedicated to GeSn. In this paper, we present our recent developments on (i) anisotropic etching of GeSn and (ii) isotropic etching of Ge selective with regard to GeSn. Even for GeSn with a Sn content as low as 6%, the etching selectivity is of 57. For 8% Sn content, the selectivity reaches 433. We used these processes to fabricate micro-disk optical cavities in thick GeSn layers. Under continuous wave pumping, optical modes were detected from photoluminescence spectra.
机译:自硅光子学问世以来,就一直在寻求在室温下工作的CMOS兼容激光器的演示。尽管块状锗(Ge)是一种间接带隙材料,但可以将锡(Sn)掺入其中,以将所得合金转变为直接带隙半导体。最近,在低温下使用锡含量为8.5%及以上的厚GeSn层证明了激光发射。随后添加光学微腔以降低激光阈值。在这里,对Ge选择性地对厚GeSn层进行欠蚀刻会限制光学模式,并放松在层内部建立的压缩应变,从而导致更直接的带隙行为。此类光子组件依赖于专门用于GeSn的技术过程。在本文中,我们介绍了我们在(i)GeSn的各向异性刻蚀和(ii)关于GeSn的选择性Ge的各向同性刻蚀方面的最新进展。即使对于Sn含量低至6%的GeSn,蚀刻选择性也达到了57。对于Sn含量为8%,选择性达到433。我们使用这些工艺在厚GeSn层中制造了微盘光学腔。在连续波泵浦下,从光致发光光谱检测光学模式。

著录项

  • 来源
    《Silicon photonics XII》|2017年|101080C.1-101080C.7|共7页
  • 会议地点 San Francisco(US)
  • 作者单位

    Univ. Grenoble Alpes, CEA, LETI, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, LETI, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, INAC, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, INAC, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, INAC, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, INAC, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, LETI, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, LETI, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, LETI, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, INAC, Minatec Campus, F38054 Grenoble, France;

    Univ. Grenoble Alpes, CEA, LETI, Minatec Campus, F38054 Grenoble, France;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GeSn alloy; optical components; laser; etching process; photoluminescence;

    机译:GeSn合金;光学元件;激光;蚀刻工艺光致发光;

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