机译:基于InP的光子集成电路的电感耦合等离子体干法刻蚀制造表面光栅
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electronic Engineering Tsinghua University Beijing 100084, China;
Department of Electrical Engineering and Information Systems Graduate School of Engineering the University of Tokyo Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems Graduate School of Engineering the University of Tokyo Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems Graduate School of Engineering the University of Tokyo Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems Graduate School of Engineering the University of Tokyo Tokyo 113-8656, Japan;
lag effect; photonic integrated circuits; plasma etching; surface gratings;
机译:级联反应离子刻蚀/电感耦合等离子体刻蚀InGaAsP / InP双浅脊矩形环形激光光子集成电路的制备与表征
机译:级联反应离子刻蚀/电感耦合等离子体刻蚀InGaAsP / InP双浅脊矩形环形激光光子集成电路的制备与表征
机译:二维InP基光子晶体制造中的电感耦合等离子体蚀刻
机译:使用电感耦合等离子体的用于电子器件制造的基于INP的半导体的室温干法刻蚀
机译:在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响(使用三氟化甲基),并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
机译:不同氟基混合气体使用电感耦合等离子体干法刻蚀钛酸钡薄膜的比较分析
机译:通过电感耦合等离子体刻蚀和快速湿法刻蚀制备高品质因子GaAs / InAsSb光子晶体微腔
机译:电感耦合等离子体(ICp)干蚀刻中三氯化硼/氯气体分子外延生长p型氮化铝镓的刻蚀特性及表面分析