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Oxygen free passivation cleaning of semiconductor devices in an inductive coupled plasma reactor to remove engraving residues left during the fabrication of integrated circuits
Oxygen free passivation cleaning of semiconductor devices in an inductive coupled plasma reactor to remove engraving residues left during the fabrication of integrated circuits
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机译:电感耦合等离子体反应器中的半导体器件的无氧钝化清洁,以去除集成电路制造过程中残留的雕刻残留物
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摘要
Oxygen free passivation cleaning of engraving residues from semiconductor substrates in a inductive coupled plasma reactor uses at least 2 % of hydrogen, a quantity of oxygen three times less than the quantity of hydrogen and in all cases less than 25 of the total flow and a moderate ionic bombardment.
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